1Amp Ultra Fast Recovery Silicon Rectifier Diode 50-1000V ES1A-ES1M SMA Package
FEATURES
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• High Temp Soldering: 260?C for 10 Seconds At Terminals
• Superfast Recovery Times For High Efficiency
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
| MCC Part Number | Device Marking | Maximum Recurrent Peak Reverse Voltage | Maximum RMS Voltage | Maximum DC Blocking Voltage |
| ES1A | ES1A | 50V | 35V | 50V |
| ES1B | ES1B | 100V | 70V | 100V |
| ES1C | ES1C | 150V | 105V | 150V |
| ES1D | ES1D | 200V | 140V | 200V |
| ES1G | ES1G | 400V | 280V | 400V |
| ES1J | ES1J | 600V | 420V | 600V |
| ES1K | ES1K | 800V | 560V | 800V |
| ES1M | ES1M | 1000V | 700V | 1000V |
| Average Forward Current | I F(AV) | 1.0A | T a = 75C |
| Peak Forward Surge Current | I FSM | 30A | 8.3ms, half sine |
| Maximum Instantaneous Forward Voltage ES1A-D ES1G-J ES1K~M | V F | .975V 1.35V 1.70V | IFM = 3.0A;
T J = 25°C |
| Maximum DC Reverse Current At Rated DC Blocking Voltage | I R | 5uA 100uA | T J = 25C T J = 100C |
| Maximum Reverse Recovery Time ES1A-D ES1G-K ES1M | T rr | 50ns 75ns 100ns | I F =0.5A, I R =1.0A, I rr =0.25A |
| Typical Junction Capacitance | C J | 45pF | Measured at 1.0MHz, V R =4.0V |
Size:
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1Amp 50-1000V Super Fast Recovery Rectifier ES1A-ES1M With SMA Package Images
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