Single Phase Silicon Diode Bridge Rectifier 10A 50-1000V GBU10005 to GBU1010
FEATURES
? Glass Passivated Die Construction
? High Case Dielectric Strength of 1500VRMS
? Low Reverse Leakage Current
? Surge Overload Rating to 220A Peak
? Ideal for Printed Circuit Board Applications
? Plastic Material: UL Flammability
Classification Rating 94V-0
? UL Listed Under Recognized Component
Index, File Number E94661
Mechanical Data
? Case: Molded Plastic
? Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
? Polarity: Marked on Body
? Mounting: Through Hole for #6 Screw
? Mounting Torque: 5.0 Inch-pounds Maximum
? Marking: Date Code and Type Number
? Weight: 6.6 grams (approx.)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
| Parameter | Symbol | GBU 10005 | GBU 1001 | GBU 1002 | GBU 1004 | GBU 1006 | GBU 1008 | GBU 1010 | UNITS |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS bridge input Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum instantaneous forward voltage drop per leg at 5.0A | VF | 1.0 | V |
| Maximum DC reverse current at rated TA =25 C DC blocking voltage per element TA =125 C | IR | 5.0 500 | μA |
| Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | IFSM | 50 | A |
| Typical Thermal Resistance (Note 2) | ReJA | 2.2 | ℃/W |
| Typical Junction Capacitance (Note 1) | Cj | 60 | pF |
| Operating junction and storage temperature range | TJ, TSTG | -55--150 | ℃ |
Size:
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